The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX(Buried Oxide).

SOI晶圓材料正在成為制備IC芯片的主要原材料。

Study of the Single-Event Effect of SOI NMOSFET by 3-D Simulation;

SOI NMOSFET單粒子效應的3-D模擬

The Design of Three-Axis Accelerometer Based on SOI;

基于SOI的三軸壓阻微加速度計的設計

Simulation experiment of tolerance of irradiation about domestic SOI 1750A microprocessor;

國產SOI 1750A微處理器抗輻射效應模擬試驗

An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.

采用線錐形結構 ,在 silicon- on- insulator(SOI)材料上設計并實現(xiàn)了一種新的緊縮型 3- d B多模干涉耦合器(MMI) 。

A 4×4 area modulation silicon on insulator (SOI) multimode interference coupler optical switch, composed of four cascaded 2×2 area modulation optical switches, has been designed.

根據(jù)區(qū)域調制多模干涉耦合器光開關的工作原理 ,以 2× 2區(qū)域調制多模干涉光開關為基礎 ,采用級聯(lián)的方式設計了 4× 4區(qū)域調制多模干涉SOI光波導開關。

Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect.

絕緣體上生長的薄單晶硅膜 (SOI)具有良好的橫向絕緣、抗輻照、無鎖存效應和無寄生電容 ,并能有效地提高硅集成電路的速度和集成度 ,在深亞微米 VL SI技術中 ,具有很大的優(yōu)勢和潛力。

Evolution of Wafer-Surface Preparation for Semiconductor Industry;

半導體產業(yè)中晶圓片表面處理的發(fā)展

The structural design of the wafer expansion device was put forward.

該裝置可完成片盒、內圈和外圈的輸入和取片動作,實現(xiàn)擴晶過程張緊力的調節(jié)控制、分離晶圓和襯架、排出空片盒和廢棄的襯架等。

We present a FEM method for forecasting the suitable pressure on the retaining ring,which is critical in manufacturing good quality wafers.

隨著晶圓直徑的增加,在CMP加工過程中,晶圓邊緣容易出現(xiàn)"過磨(over-grinding)"現(xiàn)象,降低了平坦度和晶圓利用率。

According to the characteristics,the modeling problem using Petri net for cluster tools in wafer fabrication was studied.

晶圓加工過程中使用的模塊化組合設備具有可重構性,設備配置的復雜程度由晶圓加工工藝方案決定,針對這一特點,研究了晶圓加工系統(tǒng)的Petri網建模問題。